PART |
Description |
Maker |
APT14F100S APT14F100B09 |
Power FREDFET; Package: D3 [S]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel FREDFET 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp. Microsemi Corporation MICROSEMI POWER PRODUCTS GROUP
|
APT10078BFLL_06 APT10078BFLL APT10078BFLL06 APT100 |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3 14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
2SK2258-01 |
N-channel MOS-FET 4 A, 1000 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
DMG1012UW-7 |
1000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET GREEN, PLASTIC PACKAGE-3 N-CHANNEL ENHANCEMENT MODE MOSFET
|
Diodes, Inc. Diodes Incorporated
|
SML1001R1AN SML1001R3AN SML901R3AN SML901R1AN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
2SK3337-01 |
N-CHANNEL SILICON POWER MOS-FET 7 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
FUJI ELECTRIC CO LTD FUJI ELECTRIC HOLDINGS CO., LTD.
|
IXGT15N100C |
30 A, 1000 V, N-CHANNEL IGBT, TO-268AA
|
IXYS CORP
|
IXTD2N100-3T |
1000 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
MIC94031BM4 MIC94030BM4 |
1000 mA, 13.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
SANDISK CORP
|
MCH3301 |
1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
|
MTH6N100 |
6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
MOTOROLA INC
|
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